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Chapter 28: Fabrication of Microelectronic Devices

第二十八章:微电子器件制造

28.1 Introduction (引言)

  • Clean rooms (洁净室)

28.2 Semiconductor Materials and Substrates (半导体材料与衬底)

  • Silicon wafers (硅晶圆) - Czochralski process (直拉法)

28.3 Crystal Growing and Wafer Preparation (晶体生长与晶圆制备)

28.4 Films and Film Deposition (薄膜与薄膜沉积)

  • Oxidation (氧化)
  • Physical vapor deposition (PVD) (物理气相沉积)
  • Chemical vapor deposition (CVD) (化学气相沉积)

28.5 Oxidation (氧化)

28.6 Lithography (光刻)

  • Photoresist (光刻胶)
  • Photolithography (光学光刻)
  • Electron-beam lithography (电子束光刻)

28.7 Etching (刻蚀)

  • Wet etching (湿法刻蚀)
  • Dry etching (Plasma etching) (干法刻蚀/等离子体刻蚀)

28.8 Diffusion and Ion Implantation (扩散与离子注入)

  • Doping (掺杂)

28.9 Metallization and Testing (金属化与测试)

  • Interconnects (互连)

28.10 Wire Bonding and Packaging (引线键合与封装)

  • Wire bonding (打线)
  • Flip-chip (倒装芯片)

28.11 Yield and Reliability (良率与可靠性)

28.12 Printed Circuit Boards (PCB) (印制电路板)

28.13 Summary (小结)